Numerically exact simulation of photo-doped Mott insulators
Listen
Radio episode about this paper
Transcript
Introduction to the show: ident: Quantum Radio. Generated commentary on the latest quantum physics and condensed matter papers.
Kai: We're looking at the paper: "Numerically exact simulation of photo-doped Mott insulators".
Mira: The gist: The authors demonstrate how properties of long-lived photo-doped states in Mott insulators can be computed using numerically exact steady state techniques, in particular Quantum Monte Carlo,
Kai: First, who's behind it and why it matters.
Paper summary: Kai: So, looking at "Numerically exact simulation of photo-doped Mott insulators," the authors are showing us a way to get reliable results for these long-lived states using numerically exact techniques. This paper is about tackling those exponentially separated timescales.
Mira: It really boils down to demonstrating that you can use this steady state approach, with that time-local ansatz, to compute properties of these photo-doped states directly, which is a big step because it bypasses the limitations of short real-time simulations.
Lev: What’s the practical implication for someone who just wants to build hardware for this? What does this mean for running actual experiments?
Kai: It means that even though they are using advanced techniques like quantum Monte Carlo, they are showing a pathway to characterize slow dynamics in Mott insulators that goes beyond what we could realistically measure right now.
Mira: The implication is that nonequilibrium steady state formalisms can be used to directly access quasi-stable photo-doped states in Mott insulators, and by integrating that with QBE schemes, they open up new avenues for characterizing the slow dynamics of these materials.
Lev: So, in simple terms, what’s the main point for someone who only listens to this show?
Kai: It means we can use these numerically exact techniques to study quasi-stable photo-doped states in Mott insulators without being stuck with those incredibly fast time limits of current real-time simulations.
Mira: It’s about accessing the physics of slowly evolving phases through steady state methods, which points toward new ways to characterize how these materials behave over longer timescales than we've seen before.
Lev: That seems like a solid summary of what this paper is actually doing.
Conclusion: Kai: So, we're wrapping up this look at "Numerically exact simulation of photo-doped Mott insulators," focusing on how they used these steady state methods to tackle those tough long-lived states in Mott insulators.
Mira: It really boils down to showing that you can use a time-local ansatz for the distribution function with separate Fermi functions for electron and hole quasiparticles as a way to compute these properties directly. That’s the core of their method, bypassing the usual limitations of short real-time simulations.
Lev: So, what's the big claim here regarding stability? What are they actually proving with this setup?
Kai: The main claim is that even when you dope a lot with light, that Mott gap stays robust. Plus, they found that these photo-doped states have hole and electron quasiparticles with really strongly renormalized properties.
Mira: It matters because it shows you can use these non-perturbative steady state formalisms to access those quasi-stable photo-doped states in Mott insulators, which is something real-time simulations couldn't do for long enough before.
Lev: If I were trying to run this on real hardware, what’s the first thing I need to worry about with this methodology?
Kai: Well, they set up a model using the one-band Hubbard model at half filling on a Bethe lattice with coordination number z approaching infinity. They also include an external bosonic bath via a phonon self-energy ph(t, t') = g 2G(t, t')Dbath(t, t'), with coupling strength g squared = zero point five and a linear density of states D bath(omega) = omega omega squared.
Mira: And they solve this system using nonequilibrium DMFT on that lattice structure. They also set the hopping amplitude zero to be t zero/sqrt z, and they use a hopping t zero = sqrt two which gives a bandwidth of eight.
Lev: When you look at the results, what’s the initial setup they start with? Are we talking about a perfectly ordered system or something else?
Kai: They start with an initial temperature T=two point zero, and they see the spectral function A(omega, t) beginning from two Hubbard bands with a partially filled gap because of that high initial temperature.
Mira: As kinetic energy of the doublons relaxes within a few tens of inverse hoppings, the occupied density of states A(omega, t) F(omega, t)A(omega, t) concentrates at the lower band edge of the upper Hubbard band.
Lev: That sounds like they are tracking the relaxation dynamics here. How do we know this concentration is meaningful?
Kai: They see two peaks emerge in the spectrum at the edges of the Mott gap indicating that both doublon and hole quasiparticles are present at that time. They also have results compared against inchworm QMC and NCA simulations for a given doping density n ex.
Mira: And they compare their spectral function A(omega) between inchworm QMC and NCA, as well as with AMEA spectra using six or eight bath sites.
Lev: So, looking at "Numerically exact simulation of photo-doped Mott insulators," the authors are showing us a way to get reliable results for these long-lived states using numerically exact techniques. This paper is about tackling those exponentially separated timescales.
Kai: It means we can use these numerically exact techniques to study quasi-stable photo-doped states in Mott insulators without being stuck with those incredibly fast time limits of current real-time simulations.
Mira: It’s about accessing the physics of slowly evolving phases through steady state methods, which points toward new ways to characterize how these materials behave over longer timescales than we've seen before.
Lev: That opens up a pathway for characterizing how these materials behave over much slower dynamics than what we can currently measure.
Institute of Theoretical Physics, University of Hamburg · Department of Physics, University of Michigan · Institute of Theoretical and Computational Physics, Graz University of Technology · The Raymond and Beverley Sackler Center for Computational Molecular and Materials Science, Tel Aviv University · School of Chemistry, Tel Aviv University · The Hamburg Centre for Ultrafast Imaging
cond-mat.str-el
Submitted: 2023-11-23
Updated: 2023-11-23
Comments: 9 pages, 9 figures
DOI: 10.1103/PhysRevLett.132.176501
License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
Importance score: 83/100
The gist: The gist: The authors demonstrate how properties of long-lived photo-doped states in Mott insulators can be computed using numerically exact steady state techniques, in particular Quantum Monte
Key concepts
- Photo-doping
- This is a technique where light pulses create charge carriers, specifically doublons (doubly occupied sites) and holes, in a Mott insulator. In systems with large energy gaps, these carriers can persist for long times because recombination is slow.
- Time-Local Ansatz (TLFA)
- This is an approximation used to describe the slowly evolving state of the system. Instead of tracking the full time evolution, it assumes that at any given time 't', the distribution function depends only on that specific moment, simplifying complex many-body problems.
- Quantum Monte Carlo (QMC)
- QMC is a numerically exact technique used to solve complex many-body problems in condensed matter physics. It is employed here within the nonequilibrium Dynamical Mean Field Theory (DMFT) framework to simulate how the system evolves under external perturbations like photo-doping.
- Mott Gap Robustness
- The Mott gap, which separates insulating states, is found to be stable even when significantly doped with charge carriers. This stability suggests that the photo-doped phases can persist over extended periods, potentially leading to new correlated phases.
Terminology
Summary
The gist: The authors demonstrate how properties of long-lived photo-doped states in Mott insulators can be computed using numerically exact steady state techniques, in particular Quantum Monte Carlo, by using a time-local ansatz for the distribution function with separate Fermi functions for the electron and hole quasiparticles.
Introduction to the Problem
Short light pulses provide intriguing avenues to manipulate material properties on ultrafast timescales Mott insulators are particularly interesting in this regard because a zoo of complex orders can emerge from a perturbed Mott phase A versatile route toward the generation of non-thermal phases involves photo-doping, i.e., the creation of charge carriers such as doublons (doubly occupied sites) and holes in a single-orbital Mott insulator With increasing gap, carrier recombination becomes exponentially slow so that doublon and hole densities are approximately conserved over extended periods Such cold photo-doped phases in correlated electron systems may undergo metal insulator transitions and band reconstruction and potentially even manifest superconducting instabilities. Dynamical Mean Field Theory (DMFT) and its extensions are powerful approaches to study Mott materials The main challenge in extending these methods to the time domain is the solution of a quantum impurity model. Real-time nonequilibrium DMFT simulations based on numerically exact Quantum Monte Carlo (QMC) or matrix-product states have been limited to short times, hindering the study of cold photo-doped states.
Methodology for Steady State Analysis
The authors aim to use potentially numerically exact steady state solvers to investigate slowly evolving (quasi-steady) photo-doped states. They introduce an approach that is not restricted to large U and does not alter the system by additional reservoirs. The distribution function F(ω, t) is taken to be a dynamical variable in quantum kinetic equations. The non-perturbative steady state solvers can be used to solve the many-body problem with any given distribution function Fsteady(ω). An equilibrium state is a special case where fluctuation-dissipation relations guarantee that Fsteady(ω) is equal to the Fermi function f(ω). They introduce a time-localF ansatz (TLFA), taking the steady state solution with F(ω, t) = Fsteady(ω) as an approximate description of the slowly evolving state around time t. This TLFA is validated through real-time simulations and used to simulate complex photodoped phases with non-perturbative techniques.
Model and Simulation Setup
The model considered is the one-band Hubbard model at half filling, with Hamiltonian H = −t˜0 X σ⟨i,j⟩ c† σicσj + U X i ni↑ni↓ − U 2 X σi niσ. The system is solved by means of nonequilibrium DMFT on the Bethe lattice with coordination number z → ∞ and hopping t˜0 = t0/√z. To describe energy dissipation, an external bosonic bath is included via a phonon self-energy Σph(t, t′) = g 2G(t, t′)Dbath(t, t′). The cutoff ωc = 0.2 ≪ U is chosen such that only kinetic energy relaxation of doublons and holes is possible while direct recombination via phonon emission is not.
Validation and Results
The TLFA is validated by solving the model in real-time using DMFT + NCA within the NESSi simulation package. The spectral function A(ω, t) starts from two Hubbard bands with a partially filled gap due to the high initial temperature. As kinetic energy of the doublons relaxes within a few tens of inverse hoppings, the occupied density of states A<(ω, t) ≡ F(ω, t)A(ω, t) concentrates at the lower band edge of the upper Hubbard band. Two peaks emerge in the spectrum at the edges of the Mott gap indicating simultaneous presence of doublon and hole quasiparticles. The distribution function develops two separate quasiparticle chemical potentials for the hole and doublon charge carriers. The TLFA almost perfectly reproduces the real-time spectra, i.e., the distribution function F(ω, t) characterizes the system at time t without further dependence on the history.
Comparison of Numerical Techniques
The spectral function A(ω) obtained for given nex is compared between inchworm QMC and NCA. The main characteristics of the cold photo-doped state, which is the simultaneous hole and electron quasiparticle peak, are thereby validated by the numerically exact data. The Mott gap ∆g for all three approaches is defined by the spectral weight reaching 0.057 which is half of the maximum of the equilibrium spectrum. NCA overestimates the gap ∆g in the photo-doped state, consistent with its behavior in equilibrium. The gap remains robust at large photo-doping nex even in the numerically exact solution which is an important finding supporting the stability of photo-doped orders.
Convergence and Long-Lived States
The convergence of the inchworm QMC data with respect to DMFT iterations is established by showing that chemical potential µ and gap size are stable throughout consecutive DMFT iterations. The inchworm QMC method is based on the hybridization expansion in the coupling between the impurity and its environment, exploiting the causal structure of this expansion. The TLFA can also be evaluated with AMEA, which approximates the impurity problem with a finite open system described by Nb bath orbitals with additional Lindblad dissipators. The difference between F∆ and FG is larger in the inchworm results, which is expected as the smaller gap would imply a faster dynamics so that the state found by the TLFA has a shorter lifetime and eventually thermalizes.
Conclusion
In this work, they have demonstrated how properties of these long-lived photo-doped states can be accessed with numerically exact techniques by using a time-local ansatz for the electronic distribution function. These findings indicate that nonequilibrium steady state formalisms can be used to directly access quasi-stable photo-doped states in Mott insulators. Furthermore, by integrating the steady state ansatz with QBE schemes, they open up new avenues for characterizing the slow dynamics of Mott insulators. This approach has the potential to extend into time scales far beyond the capabilities of existing real-time simulations.
Supplemental Details
The numerical calculations are based on nonequilibrium DMFT, which is a generalization of conventional DMFT for Green’s functions defined on the L-shaped Kadanoff-Baym contour C. The ansatz for the distribution function is given by FT,µex(ω) = Θα(ω)f(ω + µex, T) + (1 − Θα(ω))f(ω − µex, T), where the smooth step-function Θα(ω) = 0.5 1 - tanh(ωα/2). The results for the spectra are insensitive to the precise value of α across a wide range of values. The convergence of the restricted propagators is essentially converged at second order in the hybridization expansion. The GF for second and third order only show minor discrepancies, which are reflected in a small difference in the quasiparticle peak height. The mean of five inchworm DMFT iterations is plotted together with the standard deviation (shaded region).
Improvements for AI systems
-
Based on
numerically exact steady state techniques,
AI systems can compute properties oflong-lived photo-doped states in Mott insulators
by using atime-local ansatz for the distribution function with separate Fermi functions for the electron and hole quasiparticles.
-
AI can simulate complex photodoped phases using non-perturbative techniques by solving the many-body problem with any given distribution function Fsteady(ω), as demonstrated by adapting
FT,µex(ω) = Θα(ω)f(ω + µex, T) + (1 − Θα(ω))f(ω − µex, T).
-
AI can perform gap estimation for photo-doped states using the inchworm QMC method to determine the Mott gap
by the spectral weight reaching 0.057,
which validates thatthe Mott gap remains robust at large photo-doping nex even in the numerically exact solution.
-
AI can compare different theoretical approaches by contrasting results, noting that
NCA overestimates the gap ∆g in the photo-doped state,
whileAMEA shows a trend towards the direction of the numerically exact inchworm QMC method.
-
AI can characterize quasi-particle excitations by quantifying their effective temperature, as seen in comparing methods where
TG,inch/T∆
is shown to be larger thanTG,NCA/T∆,
indicating thatFG is consistently larger than F∆.
Sources
- Photo-induced nonequilibrium states in Mott insulators
- Picosecond volume expansion drives a later-time insulator-metal transition in a nano-textured Mott Insulator
- Non-thermal superconductivity in photo-doped multi-orbital Hubbard systems
Related papers
- Microscopic Constructions of the BF+AAB Topological Field Theory and Borromean-Rings Braiding in (3+1) Dimensions
- Transport in the emergent Bose liquid: Bad metal, strange metal, and weak insulator, all in one system
- Nature of magnetism in bilayer nickelate La3Ni2O7 single crystals
- Universal orbital and magnetic structures in infinite-layer nickelates
- Graph-Theoretic Formulation of Hamiltonian and Ground-State Sign Structures in Heisenberg Antiferromagnets
- NESSi 2.0: The Non-Equilibrium Systems Simulation package version 2.0