1/f frequency-noise reduction in nanomechanical resonators by dissipation dilution
cond-mat.mes-hall, physics.app-ph, physics.ins-det
Submitted: 2026-10-12
Updated: 2026-10-14
Comments: 11 pages, 6 figures; Supporting information: 7 pages, 3 figures
License: http://creativecommons.org/licenses/by/4.0/
The gist: The frequency noise of a resonant nanomechanical sensor is well understood down to its thermomechanical limit, but the longest useful averaging time is set by a flicker, or 1/f, frequency-noise floor
Abstract
The frequency noise of a resonant nanomechanical sensor is well understood down to its thermomechanical limit, but the longest useful averaging time is set by a flicker, or 1/f, frequency-noise floor whose origin has remained unknown. We show that this floor is the thermal noise of the tension. By the fluctuation-dissipation theorem, the tension of a resonator with fixed ends fluctuates by an amount set by the loss angle of its material; for structural damping, these fluctuations produce 1/f frequency noise with a flicker coefficient h-1=E k B T/(2πVσ 0 squared Q el), with Q el the intrinsic loss under elongation, that contains no free parameter and is diluted by the tensile stress σ 0 in the same way as damping is in dissipation dilution. Silicon nitride strings and membranes from 30 to 340 nm thickness follow the predicted volume scaling, the predicted σ 0-2 dilution across resonators and within stress-engineered strings, and the predicted thickness dependence, which places noise-active two-level systems in the volume and at the surfaces of the resonators, all at the absolute level set by the independently measured intrinsic loss. The same relation accounts for published data between 78 and 296 K; below 78 K, the loss measured at the resonance no longer represents the loss probed by the noise, marking the limit of the structural-damping assumption. Dissipation dilution therefore lowers the 1/f floor, and the longest useful integration time of a resonant sensor is set by its prestress, volume, temperature, and intrinsic loss angle.
Sources
- Determination of the intrinsic mechanical quality factor in high-stress silicon nitride resonators
- Reduction of intrinsic losses in nanomechanical silicon nitride resonators through thermal treatment in ultrahigh vacuum
- HF Etching and Silanization: Evidence for the Role of Surface Hydroxyl Groups in Silicon Nitride Resonator Loss
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